Based on Neo's estimates, 3D X-DRAM technology can achieve 128 Gb density with 230 layers, which is eight times today's DRAM density.

NEO Semiconductor said its cell array structure is based on capacitor-less floating body cell technology. It can be manufactured using today's 3D NAND-like process and only needs one mask to define the bit line holes and form the cell structure inside the holes.

This cell structure simplifies the process steps and provides a high-speed, high-density, low-cost, and high-yield solution. Based on Neo's estimates, 3D X-DRAM technology can achieve 128 Gb density with 230 layers, which is eight times today's DRAM density.

Company founder Andy Hsu said that 3D X-DRAM will be the absolute future growth driver for the Semiconductor industry.

“Neo is becoming a clear leader in the 3D DRAM market. Compared to the other solutions in the market today, our invention is very simple and less expensive to manufacture and scale. The industry can expect to achieve 8X density and capacity improvements per decade with our 3D X-DRAM."